maximum ratings: (t a =25 0 c) symbol units collector-base voltage v cbo 120 v collector-emitter voltage v ceo 70 v emitter-base voltage v ebo 7.0 v collector current i c 3.0 a power dissipation p d 2.0 w operating and storage junction temperature t j , t stg -65 to +150 0 c thermal resistance ja 62.5 0 c/w electrical characteristics: (t a =25 0 c) symbol test conditions min typ max units i cbo v cb =80v 1.0 a i ebo v eb =5.0v 1.0 a bv cbo i c =50a 120 156 v bv ceo i c =10ma 70 118 v bv ebo i e =50a 7.0 24 v v ce(sat) i c =2.0a, i b =200ma 295 500 mv v be(on) i c =2.0a, v ce =1.0v 0.93 1.1 v h fe v ce =5.0v, i c =10ma 100 210 h fe v ce =5.0v, i c =500ma 100 162 300 h fe v ce =5.0v, i c =3.0a 40 65 f t v ce =10v, i c =500ma, f=1.0mhz 8.0 mhz CZT7120 pnp silicon switching power transistor sot-223 case central semiconductor corp. tm r0 (14-march 2002) description: the central semiconductor CZT7120 pnp switching power transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a sot-223 surface mount package. typical applications include drivers, dc-dc converters, and general fast switching applications.
central semiconductor corp. tm sot-223 case - mechanical outline CZT7120 pnp silicon switching power transistor r0 (14-march 2002) lead code: 1) base 2) collector 3) emitter 4) collector
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